KT8212B Datasheet. Specs and Replacement
Type Designator: KT8212B ππ
SMD Transistor Code: ΠΠ’8212Π
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 100 Β°C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: KT28-2
ππ Copy
KT8212B Substitution
- BJT β Cross-Reference Search
KT8212B datasheet
Detailed specifications: KT816V9, KT8170A1, KT8170B1, KT817A9, KT817B9, KT817G9, KT817V9, KT8212A, TIP127, KT8212V, KT8213A, KT8213B, KT8213V, KT8214A, KT8214B, KT8214V, KT8215A
Keywords - KT8212B pdf specs
KT8212B cross reference
KT8212B equivalent finder
KT8212B pdf lookup
KT8212B substitution
KT8212B replacement
BJT Parameters and How They Relate
🌐 : EN ES Π Π£
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
irf4115 | 2sc828 replacement | 2sd669 datasheet | c102 transistor | bt152 datasheet | 2sa1302 datasheet | mpsa13 transistor equivalent | ΠΊΡ817Π³ Ρ Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ

