All Transistors. KT8296B Datasheet

 

KT8296B Datasheet and Replacement


   Type Designator: KT8296B
   SMD Transistor Code: КТ8296Б
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: KT27
 

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KT8296B Datasheet (PDF)

 9.1. Size:33K  no
 kt829a.pdf pdf_icon

KT8296B

n-p-n, 829Ik max,A 8Uo (U max)[Ur max],B100U max,B 100P max(P max), 60T max,C 150h21(h21)[S21 ] 750 U(U),B 3 I(I),A 3U ,B 2I(IR), 1500f(fh21), 4R -(R -),/ 2.08

 9.2. Size:713K  russia
 kt829a-b-v-g.pdf pdf_icon

KT8296B

 9.3. Size:213K  inchange semiconductor
 kt829a.pdf pdf_icon

KT8296B

isc Silicon NPN Darlington Power Transistor KT829ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE

Datasheet: KT8271A , KT8271B , KT8271V , KT8272A , KT8272B , KT8272V , KT8290A , KT8296A , 13001-A , KT8296G , KT8296V , KT8297A , KT8297B , KT8297G , KT8297V , KT8301A-5 , KT8304A .

Keywords - KT8296B transistor datasheet

 KT8296B cross reference
 KT8296B equivalent finder
 KT8296B lookup
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 KT8296B replacement

 

 
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