All Transistors. KT8297G Datasheet

 

KT8297G Datasheet and Replacement


   Type Designator: KT8297G
   SMD Transistor Code: КТ8297Г
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: KT27
 

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KT8297G Datasheet (PDF)

 9.1. Size:33K  no
 kt829a.pdf pdf_icon

KT8297G

n-p-n, 829Ik max,A 8Uo (U max)[Ur max],B100U max,B 100P max(P max), 60T max,C 150h21(h21)[S21 ] 750 U(U),B 3 I(I),A 3U ,B 2I(IR), 1500f(fh21), 4R -(R -),/ 2.08

 9.2. Size:713K  russia
 kt829a-b-v-g.pdf pdf_icon

KT8297G

 9.3. Size:213K  inchange semiconductor
 kt829a.pdf pdf_icon

KT8297G

isc Silicon NPN Darlington Power Transistor KT829ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE

Datasheet: KT8272V , KT8290A , KT8296A , KT8296B , KT8296G , KT8296V , KT8297A , KT8297B , 2SC5198 , KT8297V , KT8301A-5 , KT8304A , KT8304A-5 , KT8304A9 , KT8304B , KT8304B-5 , KT8304B9 .

Keywords - KT8297G transistor datasheet

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