KT837E1-IM Datasheet. Specs and Replacement

Type Designator: KT837E1-IM  📄📄 

SMD Transistor Code: КТ837Е1-ИМ

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: KT-92

  📄📄 Copy 

 KT837E1-IM Substitution

- BJT ⓘ Cross-Reference Search

 

KT837E1-IM datasheet

NO PDF data!

Detailed specifications: KT8304A, KT8304A-5, KT8304A9, KT8304B, KT8304B-5, KT8304B9, KT837A1-IM, KT837B1-IM, 2SC5200, KT837F1-IM, KT837G1-IM, KT837H1-IM, KT837I1-IM, KT837K1-IM, KT837L1-IM, KT837M1-IM, KT837N1-IM

Keywords - KT837E1-IM pdf specs

 KT837E1-IM cross reference

 KT837E1-IM equivalent finder

 KT837E1-IM pdf lookup

 KT837E1-IM substitution

 KT837E1-IM replacement