KT837L1-IM Datasheet, Equivalent, Cross Reference Search
Type Designator: KT837L1-IM
SMD Transistor Code: КТ837Л1-ИМ
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: KT-92
KT837L1-IM Transistor Equivalent Substitute - Cross-Reference Search
KT837L1-IM Datasheet (PDF)
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