KT837L1-IM Datasheet. Specs and Replacement
Type Designator: KT837L1-IM 📄📄
SMD Transistor Code: КТ837Л1-ИМ
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: KT-92
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KT837L1-IM datasheet
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Detailed specifications: KT837A1-IM, KT837B1-IM, KT837E1-IM, KT837F1-IM, KT837G1-IM, KT837H1-IM, KT837I1-IM, KT837K1-IM, C945, KT837M1-IM, KT837N1-IM, KT837P1-IM, KT837R1-IM, KT837S1-IM, KT837T1-IM, KT837U1-IM, KT837V1-IM
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BJT Parameters and How They Relate
History: HA21X | RN2709 | NB014HJ
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