KT837N1-IM Datasheet. Specs and Replacement

Type Designator: KT837N1-IM  📄📄 

SMD Transistor Code: КТ837Н1-ИМ

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: KT-92

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KT837N1-IM datasheet

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Detailed specifications: KT837E1-IM, KT837F1-IM, KT837G1-IM, KT837H1-IM, KT837I1-IM, KT837K1-IM, KT837L1-IM, KT837M1-IM, 2N5401, KT837P1-IM, KT837R1-IM, KT837S1-IM, KT837T1-IM, KT837U1-IM, KT837V1-IM, KT837Zh, KT837Zh1-IM

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