2N6316 Datasheet and Replacement
Type Designator: 2N6316
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-66
2N6316 Substitution
2N6316 Datasheet (PDF)
2n6315 2n6316.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6317/6318 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 Collect
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf

ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n6312 2n6313 2n6314.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorA
Datasheet: 2T916A , 2T928A , 2T928B , 2T938A-2 , 2T939A , 2T939A1 , 2TD543A9 , 2TD8307A9 , D882P , 2N6931 , 2N6932 , 2SA1659A , 2SA1679 , 2SA1718 , 2SA1757 , 2SA1758 , 2SA1788 .
Keywords - 2N6316 transistor datasheet
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