2SA1757 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1757
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO220FA
2SA1757 Transistor Equivalent Substitute - Cross-Reference Search
2SA1757 Datasheet (PDF)
2sa1757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1757 DESCRIPTION With TO-220Fa package Low saturation voltage Wide area of safe operation APPLICATIONS For switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -1
2sa1757.pdf
isc Silicon PNP Power Transistor 2SA1757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicat
2sa1759 2sc4505 2sc4620.pdf
2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305
2sa1759.pdf
2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A) 2SA1759 Dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -400V) MPT32) Low saturation voltage, 4.51.5typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA. 1.63) High switching speed, typically tf = 1s at Ic =100mA. 4) Wide SOA
2sa1758.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1758 DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
2sa1759.pdf
SMD Type TransistorsPNP Transistors2SA1759SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-400V High switching speed Complements to 2SC45050.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Coll
2sa1758d 2sa1758e 2sa1758f.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1758DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -2V, I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sa1758.pdf
isc Silicon PNP Power Transistor 2SA1758DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -2V, I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
