3DD303B Specs and Replacement
Type Designator: 3DD303B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
3DD303B Substitution
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3DD303B datasheet
isc Silicon NPN Power Transistor 3DD303B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
isc Silicon NPN Power Transistor 3DD303A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
isc Silicon NPN Power Transistor 3DD303C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
Detailed specifications: 3CD6D, 3DD200, 3DD201, 3DD207, 3DD301B, 3DD301C, 3DD301D, 3DD303A, D882, 3DD303C, BU1508AF, BU2506AF, BU2506AX, BU2515DX, BU2520DW, BU2525AW, BU2527DX
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