BU2515DX Specs and Replacement

Type Designator: BU2515DX

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 7.5 V

Maximum Collector Current |Ic max|: 9 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3PML

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BU2515DX datasheet

 ..1. Size:217K  inchange semiconductor

 bu2515dx.pdf pdf_icon

BU2515DX

isc Silicon NPN Power Transistor BU2515DX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 7.1. Size:54K  philips

 bu2515df 1.pdf pdf_icon

BU2515DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter ... See More ⇒

 7.2. Size:213K  inchange semiconductor

 bu2515df.pdf pdf_icon

BU2515DX

isc Silicon NPN Power Transistor BU2515DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 8.1. Size:51K  philips

 bu2515ax bu2515ax 1.pdf pdf_icon

BU2515DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 ... See More ⇒

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Detailed specifications: 3DD301C, 3DD301D, 3DD303A, 3DD303B, 3DD303C, BU1508AF, BU2506AF, BU2506AX, A1941, BU2520DW, BU2525AW, BU2527DX, BU2708DF, BU2720AX, BU2720DF, BU2722AF, BU2725AX

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