BU2525AW Specs and Replacement
Type Designator: BU2525AW
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 12 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO247
- BJT ⓘ Cross-Reference Search
BU2525AW datasheet
..1. Size:57K philips
bu2525aw 1.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi... See More ⇒
..2. Size:117K inchange semiconductor
bu2525aw.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525AW DESCRIPTION With TO-247 package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum rati... See More ⇒
7.1. Size:57K philips
bu2525ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col... See More ⇒
7.2. Size:82K philips
bu2525a.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emit... See More ⇒
7.3. Size:55K philips
bu2525af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col... See More ⇒
7.4. Size:83K philips
bu2525af.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col... See More ⇒
7.5. Size:55K philips
bu2525a 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emit... See More ⇒
7.6. Size:212K inchange semiconductor
bu2525a.pdf
isc Silicon NPN Power Transistor BU2525A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large screen colour television receivers up to 32 KHz. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
7.7. Size:216K inchange semiconductor
bu2525ax.pdf
isc Silicon NPN Power Transistor BU2525AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large Screen color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
7.8. Size:212K inchange semiconductor
bu2525af.pdf
isc Silicon NPN Power Transistor BU2525AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
Detailed specifications: 3DD303A, 3DD303B, 3DD303C, BU1508AF, BU2506AF, BU2506AX, BU2515DX, BU2520DW, 2N2222A, BU2527DX, BU2708DF, BU2720AX, BU2720DF, BU2722AF, BU2725AX, BU2725DX, BU2727AF
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