All Transistors. BU2525AW Datasheet

 

BU2525AW Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU2525AW
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 12 A
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO247

 BU2525AW Transistor Equivalent Substitute - Cross-Reference Search

   

BU2525AW Datasheet (PDF)

 ..1. Size:57K  philips
bu2525aw 1.pdf

BU2525AW
BU2525AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emi

 ..2. Size:117K  inchange semiconductor
bu2525aw.pdf

BU2525AW
BU2525AW

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525AW DESCRIPTION With TO-247 package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum rati

 7.1. Size:57K  philips
bu2525ax 1.pdf

BU2525AW
BU2525AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

 7.2. Size:82K  philips
bu2525a.pdf

BU2525AW
BU2525AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emit

 7.3. Size:55K  philips
bu2525af 1.pdf

BU2525AW
BU2525AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

 7.4. Size:83K  philips
bu2525af.pdf

BU2525AW
BU2525AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

 7.5. Size:55K  philips
bu2525a 1.pdf

BU2525AW
BU2525AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emit

 7.6. Size:212K  inchange semiconductor
bu2525a.pdf

BU2525AW
BU2525AW

isc Silicon NPN Power Transistor BU2525ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of largescreen colour television receivers up to 32 KHz.ABSOLUTE MAXIMUM RATINGS(T =25)

 7.7. Size:216K  inchange semiconductor
bu2525ax.pdf

BU2525AW
BU2525AW

isc Silicon NPN Power Transistor BU2525AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of largeScreen color TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 7.8. Size:212K  inchange semiconductor
bu2525af.pdf

BU2525AW
BU2525AW

isc Silicon NPN Power Transistor BU2525AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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