All Transistors. A1015 Datasheet

 

A1015 Datasheet, Equivalent, Cross Reference Search

Type Designator: A1015

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 130

Noise Figure, dB: -

Package: SOT23

A1015 Transistor Equivalent Substitute - Cross-Reference Search

 

A1015 Datasheet (PDF)

0.1. 2sa1015l.pdf Size:228K _toshiba

A1015
A1015

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

0.2. 2sa1015.pdf Size:227K _toshiba

A1015
A1015

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95

 0.3. ksa1015.pdf Size:42K _fairchild_semi

A1015
A1015

KSA1015LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -

0.4. 2sa1015-gr.pdf Size:504K _mcc

A1015
A1015

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

 0.5. 2sa1015-y.pdf Size:504K _mcc

A1015
A1015

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

0.6. 2sa1015-o.pdf Size:504K _mcc

A1015
A1015

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

0.7. 2sa1015.pdf Size:138K _utc

A1015
A1015

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO* Collector Current up to 150mA * High h Linearity FE* Complement to UTC 2SC1815 Lead-free: 2SA1015L Halogen-free: 2SA1015G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free P

0.8. a1015.pdf Size:443K _secos

A1015
A1015

A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H1Emitter 1112Collector 222J3Base 333CLASSIFICATION OF hFE A DMillimeter Product-Rank A1015-O A1015-Y A1015-GR REF. BMin. Max. A 4.40 4.70 Rang

0.9. 2sa1015k.pdf Size:252K _secos

A1015
A1015

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxA 2.800 3.040 FEATURES B 1.200 1.400. Power Dissipation C 0.890 1.110PCM: 0.2 W ( Ta = 25 ) AD 0.370 0.500. Collector Current LG 1.780 2.040ICM: -0.15 A 33 H 0.013 0.100. Collector-Base Volt

0.10. csa1015.pdf Size:195K _cdil

A1015
A1015

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015TO-92Plastic PackageBCEAudio Frequency General Purpose and Driver Stage Amplifier Applications.Complementary CSC1815ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage

0.11. a1015.pdf Size:337K _htsemi

A1015
A1015

A1015TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Co

0.12. a1015 to-92.pdf Size:192K _lge

A1015
A1015

A1015Transistor(PNP)TO-921.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissip

0.13. a1015 sot-23.pdf Size:214K _lge

A1015
A1015

A1015 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters)MARKING: BA MAXIMUM RATIN

0.14. a1015lt1.pdf Size:166K _wietron

A1015
A1015

A1015LT1 A1015LT1 TRANSISTOR (PNP) * G Lead(Pb)-FreeSOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless

0.15. a1015.pdf Size:720K _wietron

A1015
A1015

A1015PNP General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. COLLECTOR33. BASEMAXIMUM RATINGS* (TA=25C unless otherwise noted)Rating Symbol Value UnitVVCEOCollector-Emitter Voltage -50VCBOCollector-Base Voltage -50 VVEBOEmitter-Base VoltageV-5.0IC -150 mACollector Current Continuous0.4PDWTotal Device Dissipation TA=25CJunctio

0.16. a1015.pdf Size:334K _willas

A1015
A1015

FM120-MWILLASTHRUA1015SOT-23 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR (PNP) better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in

0.17. hsa1015.pdf Size:45K _hsmc

A1015
A1015

Spec. No. : HE6512HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2006.07.27MICROELECTRONICS CORP.Page No. : 1/4HSA1015PNP Epitaxial Planar TransistorDescriptionThe HSA1015 is designed for use in driver stage of AF amplifier and general purposeamplification. TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.....................................

0.18. a1015.pdf Size:538K _shenzhen

A1015
A1015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO -50 VCollector-Base Voltage 1 2 3 VCEO -50 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage

0.19. 2sa1015.pdf Size:284K _shenzhen

A1015
A1015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Ba

0.20. bta1015a3.pdf Size:151K _cystek

A1015
A1015

Spec. No. : C306A3-T "BTA1015A3" Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3Description The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High voltage and high current : V =-50V(min), I =-150mA(max) CEO C

0.21. a1015.pdf Size:373K _can-sheng

A1015
A1015

SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSOT-23 High voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE LinearityhFE (2)=80(Typ.) at VCE=-6V,IC=-150mAhFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low nio

0.22. a1015 sot-23.pdf Size:309K _can-sheng

A1015
A1015

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) FEATURES Complementary to C1815 MARKING:BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

0.23. 2sa1015m.pdf Size:926K _blue-rocket-elect

A1015
A1015

2SA1015M(BR3CG1015M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,,hFE ,,2SC1815M(BR3DG1815M)High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M(BR3D

0.24. a1015s.pdf Size:263K _china

A1015

A1015S PNP SiliconPNP Transistors APPLICATIONLow Frequency Amplifier Applications. MAXIMUM RATINGSTa=25PARAMETER SYMBOL RATING UNITVCBO-50 VCollector-base voltageVCEO-50 VCollector-emitter voltageVEBO-5 VEmitter-base voltage IC-0.15 ACollector currentPC0.3Collector Power Dissipation WTj 150Junc

0.25. 2sa1015lt1.pdf Size:145K _china

A1015
A1015

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3Emitter-Base Voltage Vebo -5 V

0.26. fta1015.pdf Size:262K _first_silicon

A1015
A1015

SEMICONDUCTORFTA1015TECHNICAL DATAB CFEATURES TO-92 PNP TransistorDIM MILLIMETERSA 4.70 MAXEMAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAXGC 3.70 MAXDD 0.55 MAXSymbol Parameter Value Units E 1.00F 1.27VCBO Collector-Base Voltage -50 V G 0.85H 0.45_HJ 14.00 + 0.50VCEO Collector-Emitter Voltage -50 V L 2.30F FM 0.51 MAXVEBO Emit

0.27. 2sa1015.pdf Size:775K _kexin

A1015
A1015

SMD Type orSMD Type TransistICsPNP Transistors2SA1015SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.)1 2+0.050.95+0.1-0.1 0.1 -0.01Low niose: NF=1dB(Typ.) at f=1KHz1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VC

0.28. 2sa1015.pdf Size:190K _inchange_semiconductor

A1015
A1015

`isc Silicon PNP Transistor 2SA1015DESCRIPTIONHigh Voltage and High CurrentVceo=-50V(Min.Ic=-150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SC1815Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOL

Datasheet: 2SD0602A , 2SD2098 , 2SD2114 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , AC127 , A42 , A44 , A733 , A92 , A94 , B772 , C1815 , C945 .

 

 
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