All Transistors. A1015 Datasheet

 

A1015 Datasheet, Equivalent, Cross Reference Search


   Type Designator: A1015
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 130
   Noise Figure, dB: -
   Package: SOT23

 A1015 Transistor Equivalent Substitute - Cross-Reference Search

   

A1015 Datasheet (PDF)

 ..1. Size:443K  secos
a1015.pdf

A1015
A1015

A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H1Emitter 1112Collector 222J3Base 333CLASSIFICATION OF hFE A DMillimeter Product-Rank A1015-O A1015-Y A1015-GR REF. BMin. Max. A 4.40 4.70 Rang

 ..2. Size:136K  jiangsu
a1015.pdf

A1015

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Ba

 ..3. Size:337K  htsemi
a1015.pdf

A1015
A1015

A1015TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Co

 ..4. Size:192K  lge
a1015 to-92.pdf

A1015
A1015

A1015Transistor(PNP)TO-921.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissip

 ..5. Size:214K  lge
a1015 sot-23.pdf

A1015
A1015

A1015 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters)MARKING: BA MAXIMUM RATIN

 ..6. Size:720K  wietron
a1015.pdf

A1015
A1015

A1015PNP General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. COLLECTOR33. BASEMAXIMUM RATINGS* (TA=25C unless otherwise noted)Rating Symbol Value UnitVVCEOCollector-Emitter Voltage -50VCBOCollector-Base Voltage -50 VVEBOEmitter-Base VoltageV-5.0IC -150 mACollector Current Continuous0.4PDWTotal Device Dissipation TA=25CJunctio

 ..7. Size:334K  willas
a1015.pdf

A1015
A1015

FM120-MWILLASTHRUA1015SOT-23 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR (PNP) better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in

 ..8. Size:538K  shenzhen
a1015.pdf

A1015
A1015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO -50 VCollector-Base Voltage 1 2 3 VCEO -50 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage

 ..9. Size:373K  can-sheng
a1015.pdf

A1015
A1015

SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSOT-23 High voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE LinearityhFE (2)=80(Typ.) at VCE=-6V,IC=-150mAhFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low nio

 ..10. Size:309K  can-sheng
a1015 sot-23.pdf

A1015
A1015

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) FEATURES Complementary to C1815 MARKING:BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

 ..11. Size:1070K  jsmsemi
a1015.pdf

A1015
A1015

A1015Silicon Epitaxial Planar TransistorFEATURES Complementary To 2SC1815. Excellent HFE Linearity. High voltage and high current. SOT-23 Low noise. Collector-Emitter voltage BVCEO=-50V. APPLICATIONS Low frequency , low noise amplifier. ORDERING INFORMATION Type No. Marking Package Code A1015 BA SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified

 ..12. Size:1728K  cn goodwork
a1015.pdf

A1015
A1015

A1015PNP GENERAL PURPOSE SWITCHING TRANSISTOR50Volts POWER 200mWattsVOLTAGEFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-50V.Collector current IC=-0.15A.ansition frequency fT>80MHz @ IC=-Tr1mAdc, VCE=-10Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Sol

 0.1. Size:227K  toshiba
2sa1015.pdf

A1015
A1015

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95

 0.2. Size:228K  toshiba
2sa1015l.pdf

A1015
A1015

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

 0.3. Size:42K  fairchild semi
ksa1015.pdf

A1015
A1015

KSA1015LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -

 0.4. Size:504K  mcc
2sa1015-gr.pdf

A1015
A1015

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

 0.5. Size:504K  mcc
2sa1015-y.pdf

A1015
A1015

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

 0.6. Size:504K  mcc
2sa1015-o.pdf

A1015
A1015

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

 0.7. Size:290K  onsemi
ksa1015grta ksa1015yta.pdf

A1015
A1015

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.8. Size:157K  utc
2sa1015.pdf

A1015
A1015

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO1* Collector Current up to 150mA * High h Linearity FETO-92* Complement to UTC 2SC1815 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1015L-xx-

 0.9. Size:252K  secos
2sa1015k.pdf

A1015
A1015

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxA 2.800 3.040 FEATURES B 1.200 1.400. Power Dissipation C 0.890 1.110PCM: 0.2 W ( Ta = 25 ) AD 0.370 0.500. Collector Current LG 1.780 2.040ICM: -0.15 A 33 H 0.013 0.100. Collector-Base Volt

 0.10. Size:195K  cdil
csa1015.pdf

A1015
A1015

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015TO-92Plastic PackageBCEAudio Frequency General Purpose and Driver Stage Amplifier Applications.Complementary CSC1815ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage

 0.11. Size:810K  jiangsu
2sa1015.pdf

A1015
A1015

TRANSISTOR (PNP) 1.EMITTER 2.COLLECTOR Power dissipation 3.BASE Equivalent Circuit Z Z 1

 0.12. Size:166K  wietron
a1015lt1.pdf

A1015
A1015

A1015LT1 A1015LT1 TRANSISTOR (PNP) * G Lead(Pb)-FreeSOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless

 0.13. Size:45K  hsmc
hsa1015.pdf

A1015
A1015

Spec. No. : HE6512HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2006.07.27MICROELECTRONICS CORP.Page No. : 1/4HSA1015PNP Epitaxial Planar TransistorDescriptionThe HSA1015 is designed for use in driver stage of AF amplifier and general purposeamplification. TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.....................................

 0.14. Size:284K  shenzhen
2sa1015.pdf

A1015
A1015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Ba

 0.15. Size:151K  cystek
bta1015a3.pdf

A1015
A1015

Spec. No. : C306A3-T "BTA1015A3" Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3Description The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High voltage and high current : V =-50V(min), I =-150mA(max) CEO C

 0.16. Size:1215K  blue-rocket-elect
2sa1015.pdf

A1015
A1015

2SA1015 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, h ,, 2SC1815 FEHigh voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815. / Applications

 0.17. Size:906K  blue-rocket-elect
2sa1015m.pdf

A1015
A1015

2SA1015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,, h ,, 2SC1815M FEHigh voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M. / Applicati

 0.18. Size:151K  semtech
2sa1015o 2sa1015y 2sa1015g 2sa1015l.pdf

A1015
A1015

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

 0.19. Size:145K  china
2sa1015lt1.pdf

A1015
A1015

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3Emitter-Base Voltage Vebo -5 V

 0.20. Size:263K  china
a1015s.pdf

A1015

A1015S PNP SiliconPNP Transistors APPLICATIONLow Frequency Amplifier Applications. MAXIMUM RATINGSTa=25PARAMETER SYMBOL RATING UNITVCBO-50 VCollector-base voltageVCEO-50 VCollector-emitter voltageVEBO-5 VEmitter-base voltage IC-0.15 ACollector currentPC0.3Collector Power Dissipation WTj 150Junc

 0.21. Size:262K  first silicon
fta1015.pdf

A1015
A1015

SEMICONDUCTORFTA1015TECHNICAL DATAB CFEATURES TO-92 PNP TransistorDIM MILLIMETERSA 4.70 MAXEMAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAXGC 3.70 MAXDD 0.55 MAXSymbol Parameter Value Units E 1.00F 1.27VCBO Collector-Base Voltage -50 V G 0.85H 0.45_HJ 14.00 + 0.50VCEO Collector-Emitter Voltage -50 V L 2.30F FM 0.51 MAXVEBO Emit

 0.22. Size:775K  kexin
2sa1015.pdf

A1015
A1015

SMD Type orSMD Type TransistICsPNP Transistors2SA1015SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.)1 2+0.050.95+0.1-0.1 0.1 -0.01Low niose: NF=1dB(Typ.) at f=1KHz1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VC

 0.23. Size:432K  feihonltd
a1015a.pdf

A1015
A1015

TRANSISTOR A1015A MAIN CHARACTERISTICS FEATURES IC -150mA Epitaxial silicon VCEO -50V High switching speed VCBO -50V 2SC1815 Complementary to 2SC1815 PC 400mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

 0.24. Size:1309K  slkor
a1015l.pdf

A1015
A1015

A1015PNP Silicon Epitaxial Planar TransistorSOT-23 FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collecto

 0.25. Size:545K  umw-ic
2sa1015l 2sa1015h.pdf

A1015
A1015

RUMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP)2SA1015MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emit

 0.26. Size:3930K  msksemi
2sa1015-ms.pdf

A1015
A1015

www.msksemi.com2SA1015-MSSemiconductor CompianceSemiconductor Compiance TRANSI STOR ( PNP)FEATURES High voltage and high current Excellent hFE Linearity1. BASE Complementary to C1815-MS2. EMITTERSOT23 3. COLLECTORMARKING: BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emi

 0.27. Size:1041K  cn shikues
a1015l a1015h.pdf

A1015
A1015

 0.28. Size:1845K  cn twgmc
2sa1015o 2sa1015y 2sa1015g.pdf

A1015
A1015

2SA10152 SA10 15 TRANSISTOR (PNP) FEATURES SOT-23 High voltage and high current Excellent hFE Linearity1BASE Complementary to C18152EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value Unit -50 Collector Base Voltage VCBO V -50 Collector Emitter Voltage VCEO V -5 Emitter Base Voltage VEBO V Collector Current IC -150 mA

 0.29. Size:629K  cn hottech
2sa1015.pdf

A1015
A1015

2SA1015BIPOLAR TRANSISTOR (PNP)FEATURES High current And High voltage Excellent h LinearityFE Low Noise Surface Mount device Complementary to 2SC1815SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise no

 0.30. Size:190K  inchange semiconductor
2sa1015.pdf

A1015
A1015

`isc Silicon PNP Transistor 2SA1015DESCRIPTIONHigh Voltage and High CurrentVceo=-50V(Min.Ic=-150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SC1815Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOL

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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