A1015 Datasheet. Specs and Replacement
The A1015 is a low-noise PNP bipolar junction transistor widely used in audio and general-purpose low-power circuits. It features a typical collector-emitter voltage rating of 50V and a continuous collector current of 150mA, making it suitable for signal amplification and small-load switching. Its low saturation voltage and high DC current gain (hFE commonly 130-400) enable efficient amplification with minimal distortion. The A1015 is often paired with complementary NPN devices such as the C1815. Typical applications include preamplifiers, sensor interfaces, driver stages where stable gain, low noise, compact packaging are required.
Type Designator: A1015 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: SOT23
📄📄 Copy
- BJT ⓘ Cross-Reference Search
A1015 datasheet
..1. Size:443K secos
a1015.pdf 
A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A1015-O A1015-Y A1015-GR REF. B Min. Max. A 4.40 4.70 Rang... See More ⇒
..2. Size:136K jiangsu
a1015.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Ba... See More ⇒
..3. Size:337K htsemi
a1015.pdf
A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Co... See More ⇒
..4. Size:192K lge
a1015 to-92.pdf
A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissip... See More ⇒
..5. Size:214K lge
a1015 sot-23.pdf
A1015 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters) MARKING BA MAXIMUM RATIN... See More ⇒
..6. Size:720K wietron
a1015.pdf
A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE MAXIMUM RATINGS* (TA=25 C unless otherwise noted) Rating Symbol Value Unit V VCEO Collector-Emitter Voltage -50 VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage V -5.0 IC -150 mA Collector Current Continuous 0.4 PD W Total Device Dissipation TA=25 C Junctio... See More ⇒
..7. Size:334K willas
a1015.pdf
FM120-M WILLAS THRU A1015 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in ... See More ⇒
..8. Size:538K shenzhen
a1015.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO 92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO -50 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage ... See More ⇒
..9. Size:373K can-sheng
a1015.pdf
SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES SOT-23 High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low nio... See More ⇒
..10. Size:309K can-sheng
a1015 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) FEATURES Complementary to C1815 MARKING BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo... See More ⇒
..11. Size:1070K jsmsemi
a1015.pdf
A1015 Silicon Epitaxial Planar Transistor FEATURES Complementary To 2SC1815. Excellent HFE Linearity. High voltage and high current. SOT-23 Low noise. Collector-Emitter voltage BVCEO=-50V. APPLICATIONS Low frequency , low noise amplifier. ORDERING INFORMATION Type No. Marking Package Code A1015 BA SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified ... See More ⇒
..12. Size:1728K cn goodwork
a1015.pdf
A1015 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 50Volts POWER 200mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-50V. Collector current IC=-0.15A. ansition frequency fT>80MHz @ IC=- Tr 1mAdc, VCE=-10Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol... See More ⇒
0.1. Size:227K toshiba
2sa1015.pdf
2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit mm Driver Stage Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95... See More ⇒
0.2. Size:228K toshiba
2sa1015l.pdf
2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit mm Low Noise Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) ... See More ⇒
0.3. Size:42K fairchild semi
ksa1015.pdf
KSA1015 LOW FREQUENCY AMPLIFIER Collector-Base Voltage VCBO= -50V Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -... See More ⇒
0.4. Size:504K mcc
2sa1015-gr.pdf
2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -... See More ⇒
0.5. Size:504K mcc
2sa1015-y.pdf
2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -... See More ⇒
0.6. Size:504K mcc
2sa1015-o.pdf
2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -... See More ⇒
0.7. Size:290K onsemi
ksa1015grta ksa1015yta.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
0.8. Size:157K utc
2sa1015.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage BV =-50V CEO 1 * Collector Current up to 150mA * High h Linearity FE TO-92 * Complement to UTC 2SC1815 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1015L-xx-... See More ⇒
0.9. Size:252K secos
2sa1015k.pdf
2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM -0.15 A 3 3 H 0.013 0.100 . Collector-Base Volt... See More ⇒
0.10. Size:195K cdil
csa1015.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSC1815 ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage ... See More ⇒
0.11. Size:810K jiangsu
2sa1015.pdf
TRANSISTOR (PNP) 1.EMITTER 2.COLLECTOR Power dissipation 3.BASE Equivalent Circuit Z Z 1 ... See More ⇒
0.12. Size:166K wietron
a1015lt1.pdf
A1015LT1 A1015LT1 TRANSISTOR (PNP) * G Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM -0.15 A Collector-base voltage V(BR)CBO -50 V Operating and storage junction temperature range Unit mm TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless ... See More ⇒
0.13. Size:45K hsmc
hsa1015.pdf
Spec. No. HE6512 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2006.07.27 MICROELECTRONICS CORP. Page No. 1/4 HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature........................................ See More ⇒
0.14. Size:284K shenzhen
2sa1015.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba... See More ⇒
0.15. Size:151K cystek
bta1015a3.pdf
Spec. No. C306A3-T "BTA1015A3" Issued Date 2003.08.26 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High voltage and high current V =-50V(min), I =-150mA(max) CEO C ... See More ⇒
0.17. Size:906K blue-rocket-elect
2sa1015m.pdf
2SA1015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , h , , 2SC1815M FE High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M. / Applicati... See More ⇒
0.18. Size:151K semtech
2sa1015o 2sa1015y 2sa1015g 2sa1015l.pdf
2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit... See More ⇒
0.19. Size:145K china
2sa1015lt1.pdf
SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SC1815 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN 1 2 3 Emitter-Base Voltage Vebo -5 V ... See More ⇒
0.20. Size:263K china
a1015s.pdf
A1015S PNP Silicon PNP Transistors APPLICATION Low Frequency Amplifier Applications. MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATING UNIT VCBO -50 V Collector-base voltage VCEO -50 V Collector-emitter voltage VEBO -5 V Emitter-base voltage IC -0.15 A Collector current PC 0.3 Collector Power Dissipation W Tj 150 Junc... See More ⇒
0.21. Size:262K first silicon
fta1015.pdf
SEMICONDUCTOR FTA1015 TECHNICAL DATA B C FEATURES TO-92 PNP Transistor DIM MILLIMETERS A 4.70 MAX E MAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAX G C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Units E 1.00 F 1.27 VCBO Collector-Base Voltage -50 V G 0.85 H 0.45 _ H J 14.00 + 0.50 VCEO Collector-Emitter Voltage -50 V L 2.30 F F M 0.51 MAX VEBO Emit... See More ⇒
0.22. Size:775K kexin
2sa1015.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1015 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Low niose NF=1dB(Typ.) at f=1KHz 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VC... See More ⇒
0.24. Size:1309K slkor
a1015l.pdf
A1015 PNP Silicon Epitaxial Planar Transistor SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collecto... See More ⇒
0.25. Size:545K umw-ic
2sa1015l 2sa1015h.pdf
R UMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) 2SA1015 MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emit... See More ⇒
0.26. Size:3930K msksemi
2sa1015-ms.pdf
www.msksemi.com 2SA1015-MS Semiconductor Compiance Semiconductor Compiance TRANSI STOR ( PNP) FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Complementary to C1815-MS 2. EMITTER SOT 23 3. COLLECTOR MARKING BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emi... See More ⇒
0.27. Size:754K cn evvo
2sa1015-l 2sa1015-h.pdf
2SC1015 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23) Low niose NF=1dB(Typ.) at f=1KHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Con... See More ⇒
0.29. Size:1845K cn twgmc
2sa1015o 2sa1015y 2sa1015g.pdf
2SA1015 2 SA10 15 TRANSISTOR (PNP) FEATURES SOT-23 High voltage and high current Excellent hFE Linearity 1 BASE Complementary to C1815 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit -50 Collector Base Voltage VCBO V -50 Collector Emitter Voltage VCEO V -5 Emitter Base Voltage VEBO V Collector Current IC -150 mA ... See More ⇒
0.30. Size:629K cn hottech
2sa1015.pdf
2SA1015 BIPOLAR TRANSISTOR (PNP) FEATURES High current And High voltage Excellent h Linearity FE Low Noise Surface Mount device Complementary to 2SC1815 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise no... See More ⇒
0.31. Size:190K inchange semiconductor
2sa1015.pdf
isc Silicon PNP Transistor 2SA1015 DESCRIPTION High Voltage and High Current Vceo=-50V(Min. Ic=-150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SC1815 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. ABSOL... See More ⇒
Detailed specifications: 2SD0602A, 2SD2098, 2SD2114, 2SD2142, 2SD2150, 2SD2413, 2SD965A, 3DK2222A, 431, A42, A44, A733, A92, A94, B772, C1815, C945
Keywords - A1015 pdf specs
A1015 cross reference
A1015 equivalent finder
A1015 pdf lookup
A1015 substitution
A1015 replacement
