HM879 Specs and Replacement
Type Designator: HM879
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT89
HM879 Transistor Equivalent Substitute - Cross-Reference Search
HM879 detailed specifications
hm879.pdf
HM879 TRANSISTOR (NPN) SOT-89-3L FEATURES High Current 1. BASE Low Voltage 2. COLLECTOR General Purpose Amplifier Applications 3. EMITTER MARKING 879 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current 3 A PC Collector ... See More ⇒
Detailed specifications: A92 , A94 , B772 , C1815 , C945 , CJF715 , D882 , HM4033 , BD222 , KTA1668 , KTA2014 , KTD1898 , M28S , M8050 , M8550 , MMBT589 , MMBTA44 .
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