S9013 Datasheet, Equivalent, Cross Reference Search

S9013 Transistor Equivalent Substitute - Cross-Reference Search

S9013 Datasheet (PDF)

0.1. ss9013.pdf Size:40K _fairchild_semi

SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCB

0.2. ss9013.pdf Size:53K _samsung

SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Vo

 0.3. mms9013-l.pdf Size:201K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone: (818) 701-4933 MMS9013-H Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating

0.4. s9013h s9013g s9013i.pdf Size:192K _mcc

MCC S9013-G TM Micro Commercial Components 20736 Marilla Street Chatsworth S9013-H Micro Commercial Components CA 91311 S9013-I Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon • Collector-current 0.5A • Collector-base Voltage 40V Transistors • Operating and

 0.5. mms9013-h.pdf Size:201K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone: (818) 701-4933 MMS9013-H Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating

0.6. sts9013.pdf Size:197K _auk

 STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features • Excellent hFE linearity. E • Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-B

0.7. s9013t.pdf Size:95K _secos

S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation P CM : 0.625 W Tamb=25 C Collector current CM: 0.5 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2

0.8. s9013.pdf Size:343K _secos



0.9. s9013w.pdf Size:54K _secos

S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity A L 3 3 CLASSIFICATION OF hFE Top View C B 1 1 2 Product-Rank S9013W-L S9013W-H S9013W-J 2 K E Range 120~200 200~350 300~400 D Marking Code J3

0.10. s9013.pdf Size:587K _htsemi

S901 3 TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power

0.11. s9013w.pdf Size:431K _htsemi

S901 3W TRANSISTOR(NPN) SOT–323 FEATURES  High Collector Current  Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA P Collector Power Dissipatio

0.12. s9013.pdf Size:240K _gsme

桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9013 FEATURES ■FEATURES 特點 FEATURES Excellent HFE Linearity HFE 線性特性極好 hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9012 与 GM9012 互补 MAXIMUM RATINGS (Ta=25 ) ■MAXIMUM RATIN

0.13. s9013 sot-23.pdf Size:167K _lge

 S9013 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector

0.14. s9013 to-92.pdf Size:158K _lge

S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (milli

0.15. s9013lt1.pdf Size:125K _wietron

S9013LT1 3 P b Lead(Pb)-Free 1 2 SOT-23 Value VCEO 20 40 5.0 500 S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S 0.1 20 40 100 100 u 0.15 35 0.15 u 4.0 1/2 28-Apr-2011 WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain h

0.16. s9013.pdf Size:407K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi

0.17. s9013lt1.pdf Size:359K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter

0.18. s9013.pdf Size:256K _can-sheng

TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES z FEATURES TO-92 Complementary to S9012 z Excellent hFE linearity 1.EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 2.BASE Symbol Parameter Val

0.19. s9013 sot-23.pdf Size:260K _can-sheng

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units （符号） （参数名称） （额定值） （单�

0.20. s9013.pdf Size:195K _inchange_semiconductor

isc Silicon NPN Power Transistor S9013 DESCRIPTION ·Excellent hFE linearity ·Complement to PNP Type S9012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter

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