S9013 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S9013
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz
Ganancia de corriente contínua (hfe): 120
Empaquetado / Estuche: SOT23
Búsqueda de reemplazo de transistor bipolar S9013
S9013 Datasheet (PDF)
..1. s9013.pdf 
Size:343K _secos
..2. s9013.pdf Size:587K _htsemi
S901 3TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 500 mA PC Collector Power
..3. s9013.pdf Size:240K _gsme
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9013FEATURESFEATURES FEATURESExcellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.Complementary to GM9012 GM9012 MAXIMUM RATINGS (Ta=25 )MAXIMUM RATIN
..4. s9013 sot-23.pdf Size:167K _lge
S9013 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector
..5. s9013 to-92.pdf Size:158K _lge
S9013 Transistor(NPN)TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (milli
..6. s9013.pdf Size:407K _shenzhen
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi
..7. s9013.pdf Size:256K _can-sheng
TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURES zFEATURESTO-92Complementary to S9012 zExcellent hFE linearity1.EMITTERMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS2.BASESymbol Parameter Val
..8. s9013 sot-23.pdf Size:260K _can-sheng
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units
..9. s9013.pdf Size:195K _inchange_semiconductor
isc Silicon NPN Power Transistor S9013DESCRIPTIONExcellent hFE linearityComplement to PNP Type S9012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collector-Emitter Voltage 25 VCEOV Emitter
0.1. ss9013.pdf Size:40K _fairchild_semi
SS90131W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCB
0.2. ss9013.pdf Size:53K _samsung
SS9013 NPN EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Vo
0.3. mms9013-l.pdf Size:201K _mcc
MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMS9013-LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMS9013-HFax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating
0.4. s9013h s9013g s9013i.pdf Size:192K _mcc
MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and
0.5. mms9013-h.pdf Size:201K _mcc
MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMS9013-LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMS9013-HFax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating
0.6. sts9013.pdf Size:197K _auk
STS9013NPN Silicon TransistorDescriptions PIN Connection General purpose application. C Switching application. BFeatures Excellent hFE linearity. E Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-B
0.7. s9013t.pdf Size:95K _secos
S9013TNPN Epitaxial Silicon TransistorRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 C Collector currentCM: 0.5 A I0.43+0.080.07 Collector-base voltage46+0.10. 0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter+0.2
0.8. s9013w.pdf Size:54K _secos
S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity AL33CLASSIFICATION OF hFE Top View C B11 2Product-Rank S9013W-L S9013W-H S9013W-J 2K ERange 120~200 200~350 300~400 DMarking Code J3
0.9. s9013w.pdf Size:431K _htsemi
S901 3WTRANSISTOR(NPN)SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA P Collector Power Dissipatio
0.10. s9013lt1.pdf Size:125K _wietron
S9013LT13P b Lead(Pb)-Free12SOT-23ValueVCEO20405.0500S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S0.12040100100u0.15350.15 u4.01/2 28-Apr-2011WEITRONhttp://www.weitron.com.twS9013LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Max UnitMinON CHARACTERISTICSDC Current Gainh
0.11. s9013lt1.pdf Size:359K _shenzhen
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , A1013 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
