2N5896 Datasheet and Replacement

   Type Designator: 2N5896
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 57 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 110 °C
   Transition Frequency (ft): 0.25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO66
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