SC236 Specs and Replacement
Type Designator: SC236
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Electrical Characteristics
Transition Frequency (ft): 170 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: E-LINE
- BJT ⓘ Cross-Reference Search
SC236 datasheet
0.1. Size:55K sanyo
2sa1016 2sc2362 2sc2362k.pdf 
Ordering number ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter ( ) 2SA1016, 1016K 2 Collecor 3 Base Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta = 25 C 2SA101... See More ⇒
0.4. Size:355K taiwansemi
tsc236.pdf
TSC236 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.3V @ IC / IB = 2.5A / 0.6A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Pack... See More ⇒
0.5. Size:97K advanced-semi
2sc2367.pdf
2SC2367 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION The ASI 2SC2367 is Designed for general purpose and small signal PACKAGE STYLE .100 4L PILL amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 C TJ ... See More ⇒
0.6. Size:332K jmnic
2sc2365.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2365 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB... See More ⇒
0.7. Size:189K inchange semiconductor
2sc2365.pdf
isc Silicon NPN Power Transistor 2SC2365 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 6... See More ⇒
0.8. Size:184K inchange semiconductor
2sc2361.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Detailed specifications: SS8550B, STD123S, SC116, SC117, SC118, SC119, SC206, SC207, 2SD1047, SC237, SC238, SC239, SC307, SC308, SC309, SCE237, SCE238
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