SD338 Specs and Replacement

Type Designator: SD338

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Electrical Characteristics

Transition Frequency (ft): 190 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT89

 SD338 Substitution

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SD338 datasheet

 ..1. Size:123K  gdr

 sd168 sd335 sd336 sd337 sd338 sd339 sd340 sd345 sd346 sd347 sd348 sd349 sd350 sd600 sd601 sd602 sd802 sd812.pdf pdf_icon

SD338

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 ..2. Size:148K  gdr

 sd335 sd336 sd337 sd338 sd339 sd340.pdf pdf_icon

SD338

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 ..3. Size:321K  gdr

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SD338

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 0.1. Size:196K  inchange semiconductor

 2sd338.pdf pdf_icon

SD338

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD338 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ... See More ⇒

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Detailed specifications: SCE537, SCE538, SCE539, SCE540, SD168, SD335, SD336, SD337, SS8050, SD339, SD340, SD345, SD346, SD347, SD348, SD349, SD350

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