SS125 Datasheet, Equivalent, Cross Reference Search
Type Designator: SS125
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Forward Current Transfer Ratio (hFE), MIN: 28
Noise Figure, dB: -
Package: TO39
SS125 Transistor Equivalent Substitute - Cross-Reference Search
SS125 Datasheet (PDF)
bss125.pdf
BSS 125SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 VPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package MarkingBSS 125 600 V 0.1 A 45 TO-92 SS125Type Ordering Code Tape and Reel InformationBSS 125 Q62702-S021 E6288BSS 125 Q67000-S008 E6296BSS 125 Q67000-S233 E6325Maximum RatingsParameter Symbol Values UnitDrain sourc
rss125n03fu6tb rss125n03tb.pdf
RSS125N03 Transistors Switching (30V, 12.5A) RSS125N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8) . 3.9(1) Source6.0(2) Source Application (3) SourcePower switching, DC / DC converter. (4) Gate(5) Drain0.4Min.(6 )DrainEach lead has same dimensions(7)
nss12500uw3.pdf
NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
nss12500uw3t2g.pdf
NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
nss12501uw3-d.pdf
NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
nss12501uw3t2g.pdf
NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
