2SA965TM PDF and Equivalents Search

 

2SA965TM Specs and Replacement

Type Designator: 2SA965TM

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92MOD

 2SA965TM Substitution

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2SA965TM datasheet

 ..1. Size:78K  secos

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2SA965TM

2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications B CLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y K E F Range 80-160 120-240 C N G H 1 Emitter 1 1 1 2 Collector 2 ... See More ⇒

 8.1. Size:173K  toshiba

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2SA965TM

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 8.2. Size:213K  inchange semiconductor

2sa965.pdf pdf_icon

2SA965TM

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA965 DESCRIPTION Power amplifier applications Driver stage amplifier applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CB... See More ⇒

 9.1. Size:178K  toshiba

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2SA965TM

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Detailed specifications: SU518 , SU519 , SU520 , 2SA1015K , 2SA1980 , 2SA1981 , 2SA2018F , 2SA812K , S9018 , 2SB1322A , 2SB764L , 2SC1318A , 2SC1383L , 2SC1384L , 2SC1623K , 2SC1740S , 2SC2235TM .

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