C945T Datasheet and Replacement
Type Designator: C945T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
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C945T Datasheet (PDF)
c945t.pdf

C945TNPN SiliconElektronische BauelementePlastic-Encapsulate TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURES Low noise TO-92Excellent hFE linearity Complementary to A733TMAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO 60 V 1Collector-Emitter Voltage VCEO 50 V23
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SD1805G | BC108C | MP4122 | GS9015A | D11C207B20 | GSTS9014LT1 | BTD882T3
Keywords - C945T transistor datasheet
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History: 2SD1805G | BC108C | MP4122 | GS9015A | D11C207B20 | GSTS9014LT1 | BTD882T3



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