UMX18N Datasheet. Specs and Replacement
Type Designator: UMX18N 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 320 MHz
Collector Capacitance (Cc): 7.5 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Package: SOT-363
UMX18N Substitution
- BJT ⓘ Cross-Reference Search
UMX18N datasheet
EMX18 / UMX18N Datasheet General purpose transistor (dual transistors) lOutline l Parameter Tr1 and Tr2 SOT-563 SOT-363 VCEO 12V IC 500mA EMX18 UMX18N (EMT6) (UMT6) lFeatures lInner circuit l l 1)Two 2SC5585 chips in a EMT or UMT package. 2)Mounting possible... See More ⇒
UMX18N Plastic-Encapsulated General Purpose Transistors (dual transistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-363 FEATURES A E Two chips in a package. L Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. B Mounting cost an... See More ⇒
Detailed specifications: S9018T, SEMY1, SEMZ8, SS8050T, SS8050W, SS8550T, SS8550W, STB1277, TIP35C, 2SD2118, 3DD13005, B772C, BCP1213, BCP156, BCP157, BCP1766, BCP1898
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