UMX18N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMX18N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 320 MHz
Collector Capacitance (Cc): 7.5 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: SOT-363
UMX18N Transistor Equivalent Substitute - Cross-Reference Search
UMX18N Datasheet (PDF)
emx18 umx18n.pdf
EMX18 / UMX18NDatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Tr1 and Tr2 SOT-563 SOT-363VCEO12VIC500mA EMX18 UMX18N(EMT6) (UMT6) lFeatures lInner circuitl l1)Two 2SC5585 chips in a EMT or UMT package.2)Mounting possible
umx18n.pdf
UMX18N Plastic-Encapsulated General Purpose Transistors (dual transistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-363 FEATURES AE Two chips in a package. L Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. B Mounting cost an
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
