BCP1213 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCP1213
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT89
BCP1213 Transistor Equivalent Substitute - Cross-Reference Search
BCP1213 Datasheet (PDF)
..1. Size:590K secos
bcp1213.pdf
bcp1213.pdf
BCP1213 PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 The BCP1213 is designed for using in power amplifier applications Aor power switching applications. ECMARKING B DType Name hFE Ranking NY F GH KMillimeter Millimeter J LREF. REF. Min. Max. Min. Max.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
