BCP1213 Datasheet. Specs and Replacement
Type Designator: BCP1213 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SOT89
BCP1213 Substitution
- BJT ⓘ Cross-Reference Search
BCP1213 datasheet
BCP1213 PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 The BCP1213 is designed for using in power amplifier applications A or power switching applications. E C MARKING B D Type Name hFE Ranking NY F G H K Millimeter Millimeter J L REF. REF. Min. Max. Min. Max.... See More ⇒
Detailed specifications: SS8050W, SS8550T, SS8550W, STB1277, UMX18N, 2SD2118, 3DD13005, B772C, TIP31, BCP156, BCP157, BCP1766, BCP1898, BCP195, BCP2098, BCP4672, BCP5401
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