BCP195 Datasheet and Replacement
Type Designator: BCP195
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
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BCP195 Datasheet (PDF)
bcp195.pdf

BCP195PNP Silicon PlanarMedium Power TransistorRoHS Compliant ProductSOT-89 DescriptionThe BCP195 is designed for medium power amplifier applications.1231.BASE2.COLLECTORFeatures3.EMITTER* 1Amp Continuous Current* -60V VCEO* Complementary TO BCP194Millimeter MillimeterREF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BCF29B | TP2907R | BCM847BV | BD677G | TPC6501 | BCF93B | BCP627C
Keywords - BCP195 transistor datasheet
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History: BCF29B | TP2907R | BCM847BV | BD677G | TPC6501 | BCF93B | BCP627C



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