BCP195 Datasheet. Specs and Replacement

Type Designator: BCP195  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT89

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BCP195 datasheet

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BCP195

BCP195 PNP Silicon Planar Medium Power Transistor RoHS Compliant Product SOT-89 Description The BCP195 is designed for medium power amplifier applications. 1 2 3 1.BASE 2.COLLECTOR Features 3.EMITTER * 1Amp Continuous Current * -60V VCEO * Complementary TO BCP194 Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50... See More ⇒

Detailed specifications: 2SD2118, 3DD13005, B772C, BCP1213, BCP156, BCP157, BCP1766, BCP1898, SS8050, BCP2098, BCP4672, BCP5401, BCP5551, BCP669A, BCP772, BCP869, BCP882

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