BCP869 Specs and Replacement

Type Designator: BCP869

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 32 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT89

 BCP869 Substitution

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BCP869 datasheet

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BCP869

BCP869 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES The BCP869 is designed for application required for high current (maximum -1 A) and low voltage (maximum -20 V). PACKAGE DIMENSIONS SOT-89 A C D Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.60 G 3.00 REF... See More ⇒

Detailed specifications: BCP1898, BCP195, BCP2098, BCP4672, BCP5401, BCP5551, BCP669A, BCP772, 2SB817, BCP882, BCPA14, BCPA42, BCPA94, BD13003B, CZD1182, CZD1386, CZD1952

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