CZD1386 Specs and Replacement
Type Designator: CZD1386
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Package: TO252
CZD1386 Substitution
- BJT ⓘ Cross-Reference Search
CZD1386 datasheet
CZD1386 -5 A, -30 V PNP Epitaxial Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD1386 is designed for low frequency applications. FEATURES Low VCE(sat) = -0.55V(Typ.) (IC/IB = -4 A/ -0.1 A) Excellent DC current gain characteristics PACKAGE DIMENSIONS Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 ... See More ⇒
CZD13003 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252 FEATURES Power Switching Applications PACKAGE INFORMATION Package MPQ Leader Size A C B D TO-252 2.5K 13 inch G E K H F N O P M J Collector 2 Millimeter Millimeter REF. REF. Min. Max. Min. Ma... See More ⇒
Detailed specifications: BCP772, BCP869, BCP882, BCPA14, BCPA42, BCPA94, BD13003B, CZD1182, 2222A, CZD1952, CZD2983, CZD5103, CZD772, KSA928ATL, MMBT2222Q, MMBT2907Q, PZT157
Keywords - CZD1386 pdf specs
CZD1386 cross reference
CZD1386 equivalent finder
CZD1386 pdf lookup
CZD1386 substitution
CZD1386 replacement
