CZD1386 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZD1386
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: TO252
CZD1386 Transistor Equivalent Substitute - Cross-Reference Search
CZD1386 Datasheet (PDF)
czd1386.pdf
CZD1386 -5 A, -30 V PNP Epitaxial Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD1386 is designed for low frequency applications. FEATURES Low VCE(sat) = -0.55V(Typ.) (IC/IB = -4 A/ -0.1 A) Excellent DC current gain characteristics PACKAGE DIMENSIONS Millimeter Millimeter REF. REF.Min. Max. Min. Max.A 6.40 6.80 G 0.50 0.70B 5.20 5.50 H 2.20 2.40
czd13003.pdf
CZD13003 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252 FEATURES Power Switching Applications PACKAGE INFORMATION Package MPQ Leader Size ACBDTO-252 2.5K 13 inch G EK H FNOPM J Collector 2 Millimeter Millimeter REF. REF. Min. Max. Min. Ma
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
