CZD1952 Specs and Replacement
Type Designator: CZD1952
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO252
CZD1952 Substitution
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CZD1952 datasheet
CZD1952 PNP High Speed Elektronische Bauelemente Switching Transistor RoHS Compliant Product TO-252 Description The CZD1952 is designed for high speed switching applications. Features * Wide SOA * Low Saturation Voltage,Typically VCE(sat)=-0.2V at IC/IB=-3A/-0.15A * High Speed Switching,Typically tf=-0.15us at IC=-3A * Complements to CZD5103 Millimeter Millimeter REF. REF. ... See More ⇒
Detailed specifications: BCP869, BCP882, BCPA14, BCPA42, BCPA94, BD13003B, CZD1182, CZD1386, 2SC5198, CZD2983, CZD5103, CZD772, KSA928ATL, MMBT2222Q, MMBT2907Q, PZT157, PZT158
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