All Transistors. CZD1952 Datasheet

 

CZD1952 Datasheet and Replacement


   Type Designator: CZD1952
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO252
 

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CZD1952 Datasheet (PDF)

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CZD1952

CZD1952 PNP High SpeedElektronische Bauelemente Switching TransistorRoHS Compliant ProductTO-252Description The CZD1952 is designed for high speed switching applications.Features* Wide SOA* Low Saturation Voltage,Typically VCE(sat)=-0.2V at IC/IB=-3A/-0.15A* High Speed Switching,Typically tf=-0.15us at IC=-3A* Complements to CZD5103Millimeter Millimeter REF. REF.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MJ11012 | 3CD9A

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