CZD1952 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZD1952
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO252
CZD1952 Transistor Equivalent Substitute - Cross-Reference Search
CZD1952 Datasheet (PDF)
..1. Size:758K secos
czd1952.pdf
czd1952.pdf
CZD1952 PNP High SpeedElektronische Bauelemente Switching TransistorRoHS Compliant ProductTO-252Description The CZD1952 is designed for high speed switching applications.Features* Wide SOA* Low Saturation Voltage,Typically VCE(sat)=-0.2V at IC/IB=-3A/-0.15A* High Speed Switching,Typically tf=-0.15us at IC=-3A* Complements to CZD5103Millimeter Millimeter REF. REF.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
