All Transistors. CZD1952 Datasheet

 

CZD1952 Datasheet and Replacement


   Type Designator: CZD1952
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO252
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CZD1952 Datasheet (PDF)

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CZD1952

CZD1952 PNP High SpeedElektronische Bauelemente Switching TransistorRoHS Compliant ProductTO-252Description The CZD1952 is designed for high speed switching applications.Features* Wide SOA* Low Saturation Voltage,Typically VCE(sat)=-0.2V at IC/IB=-3A/-0.15A* High Speed Switching,Typically tf=-0.15us at IC=-3A* Complements to CZD5103Millimeter Millimeter REF. REF.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KBC817-40 | PMB1626 | 3CD3C | 2SC1593 | DTA143EEFRA | MMDT3904V | 2SD439

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