CZD2983 Specs and Replacement
Type Designator: CZD2983
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO252
CZD2983 Substitution
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CZD2983 datasheet
CZD2983 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD2983 is designed for power amplifier and driver stage amplifier applications. D-Pack (TO-252) FEATURES High transition frequency fT = 100MHz (Typ.) Complements to CZD1225 A C B D G E K H F N O P Collector M J MARKING 2983 Date... See More ⇒
Detailed specifications: BCP882, BCPA14, BCPA42, BCPA94, BD13003B, CZD1182, CZD1386, CZD1952, NJW0281G, CZD5103, CZD772, KSA928ATL, MMBT2222Q, MMBT2907Q, PZT157, PZT158, PZT159
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