CZD2983 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZD2983
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO252
CZD2983 Transistor Equivalent Substitute - Cross-Reference Search
CZD2983 Datasheet (PDF)
..1. Size:609K secos
czd2983.pdf
czd2983.pdf
CZD2983 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD2983 is designed for power amplifier and driver stage amplifier applications. D-Pack (TO-252)FEATURES High transition frequencyfT = 100MHz (Typ.) Complements to CZD1225 AC BDG EK H FNOPCollectorM JMARKING 2983 Date
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N669
