PZT965 Datasheet, Equivalent, Cross Reference Search
Type Designator: PZT965
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Noise Figure, dB: -
Package: SOT223
PZT965 Transistor Equivalent Substitute - Cross-Reference Search
PZT965 Datasheet (PDF)
..1. Size:1526K secos
pzt965.pdf
pzt965.pdf
PZT965NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZT965 is designed for use as AF output amplifier and flash unit.MillimeterMillimeterREF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. 9 6 5C 2.90 3.10 J 2.30 REF. Date CodeD 0.02 0.10 1 6.30 6.70 E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.30 3
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
