PZT965 Datasheet and Replacement
Type Designator: PZT965
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Noise Figure, dB: -
Package: SOT223
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PZT965 Datasheet (PDF)
pzt965.pdf

PZT965NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZT965 is designed for use as AF output amplifier and flash unit.MillimeterMillimeterREF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. 9 6 5C 2.90 3.10 J 2.30 REF. Date CodeD 0.02 0.10 1 6.30 6.70 E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.30 3
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC3902R | LMBTA56LT1G | BDT41A | FMA5A | NJVMJD128T4G | HMBT6520 | KSR1114
Keywords - PZT965 transistor datasheet
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History: 2SC3902R | LMBTA56LT1G | BDT41A | FMA5A | NJVMJD128T4G | HMBT6520 | KSR1114



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