PZT965 Specs and Replacement

Type Designator: PZT965

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 230

Noise Figure, dB: -

Package: SOT223

 PZT965 Substitution

- BJT ⓘ Cross-Reference Search

 

PZT965 datasheet

 ..1. Size:1526K  secos

 pzt965.pdf pdf_icon

PZT965

PZT965 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT965 is designed for use as AF output amplifier and flash unit. Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. 9 6 5 C 2.90 3.10 J 2.30 REF. Date Code D 0.02 0.10 1 6.30 6.70 E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.30 3... See More ⇒

Detailed specifications: PZT358, PZT359, PZT4672, PZT559, PZT559A, PZT6718, PZT772, PZT882, MJE350, PZT987A, PZTA27, PZTA94, SZD772, 2SD2583, BCP1300, BCP1616A, BCP194A

Keywords - PZT965 pdf specs

 PZT965 cross reference

 PZT965 equivalent finder

 PZT965 pdf lookup

 PZT965 substitution

 PZT965 replacement