CZD1181 Specs and Replacement
Type Designator: CZD1181
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 1 A
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 82
Package: TO252
CZD1181 Substitution
- BJT ⓘ Cross-Reference Search
CZD1181 datasheet
CZD1182 PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50 0. 15 2. 30 0. 10 5. 30 0. 10 FEATURES C 0. 51 0. 05 The CZD1182 is designed for medium power amplifier application Low collector saturation voltage VCE(sat)=-0.5V (Typ.) 1. 20 0. 51 0. 10 RoHS Compliant Product 0 10 0. 5 5 0. 80 0. 10 MARKING 1182 0. 60 10 0. 2. 30 0. 10... See More ⇒
Detailed specifications: BCPA1668, BCPA27, BCPA64, BCPC4373, BCPC4374, BCPR33, BCPR43, BD034, TIP41, CZD4672, CZD8050, CZD8550, CZD882, PZT194A, PZT195A, PZT3019, PZT32C
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