3DD13002B Datasheet, Equivalent, Cross Reference Search

   Type Designator: 3DD13002B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92

3DD13002B Transistor Equivalent Substitute - Cross-Reference Search

3DD13002B Datasheet (PDF)

..1. Size:842K jiangsu
3dd13002b.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTORNPN TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13002B=Device code 13002B Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Par

..2. Size:398K lge
3dd13002b.pdf

3DD13002B(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.322.92 5.33MINFeatures power switching applications 3.43MIN 2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18Symbol Parameter Value Units2.034.192.67VCBO Collector-Base Voltage 600 V 1.141.402.03VCEO Collector-Emitter Voltage 400 V 2.67

..3. Size:149K wietron
3dd13002b.pdf

3DD13002BSwitch Mode NPN TransistorsTO-921. EMITTER122. COLLECTOR33. BASEABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 400 VdcCollector-Base Voltage VCBO 600VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC1.0 AdcPD 1.0Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Tempera

0.1. Size:178K crhj
3dd13002b1-7.pdf