BC546C Specs and Replacement
Type Designator: BC546C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: TO92
BC546C Substitution
BC546C detailed specifications
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BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi... See More ⇒
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
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BC546xBK ... BC549xBK BC546xBK ... BC549xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2009-12-03 0.1 Power dissipation Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Geh usematerial... See More ⇒
Detailed specifications: SMUN5334DW , UMH13N , UMH15N , 2SB1412 , 3DD13002B , A1015LT1 , A733LT1 , BC5347B , 2SC5200 , BC846BDW , BC846BPDW , BC846CW , BC847BDW , BC847BPDW , BC848BDW , BC848BPDW , BC856BDW .
History: BC546BTA
Keywords - BC546C transistor specs
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History: BC546BTA
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