C1815LT1 Specs and Replacement

Type Designator: C1815LT1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 130

Noise Figure, dB: -

Package: SOT23

 C1815LT1 Substitution

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C1815LT1 datasheet

 ..1. Size:230K  wietron

c1815lt1.pdf pdf_icon

C1815LT1

C1815LT1 C1815LT1 TRANSISTOR (NPN) SOT-23 * G Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM 0.15 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 Unit mm ELECTRICAL CHARACTERISTICS (Tamb=25 unless other... See More ⇒

 0.1. Size:122K  hfzt

2sc1815lt1.pdf pdf_icon

C1815LT1

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SA1015 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN 1 2 3 Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25 * PD 225 mW NO... See More ⇒

 8.1. Size:308K  toshiba

2sc1815l.pdf pdf_icon

C1815LT1

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit mm Low Noise Amplifier Applications High breakdown voltage, high current capability V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA h (I = 0.1 mA)/h (I = 2 mA)... See More ⇒

 8.2. Size:141K  semtech

mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf pdf_icon

C1815LT1

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO ... See More ⇒

Detailed specifications: BC846CW, BC847BDW, BC847BPDW, BC848BDW, BC848BPDW, BC856BDW, BC857BDW, BC858BDW, TIP41, C945LT1, LB123T, M8050LT1, M8550LT1, MBT2222ADW, MBT2907ADW, MBT3904DW, MBT3906DW

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