WTM669A Datasheet, Equivalent, Cross Reference Search
Type Designator: WTM669A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT-89
WTM669A Transistor Equivalent Substitute - Cross-Reference Search
WTM669A Datasheet (PDF)
..1. Size:400K wietron
wtm669a.pdf
wtm669a.pdf
WTM669ANPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage180VCEOVCollector-Emitter Voltage 160VEBOVEmitter-Base Voltage 5IC(DC)1.5Collector CurrentAIC(Pulse) 3Collector Power Dissipation PD 1 WJunction TemperatureTj
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
