MMUN2115 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMUN2115
SMD Transistor Code: A6E
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.246 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
MMUN2115 Transistor Equivalent Substitute - Cross-Reference Search
MMUN2115 Datasheet (PDF)
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMUN2111LT1/DBias Resistor TransistorMMUN2111LT1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a s
mmun2111.pdf
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mmun2111.pdf
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Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .