2N5945 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N5945
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 470 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: 244-04

2N5945 Transistor Equivalent Substitute - Cross-Reference Search

2N5945 Datasheet (PDF)

..1. Size:208K 1
2n5944 2n5945 2n5946.pdf

..2. Size:13K advanced-semi
2n5945.pdf

2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5945 is Designed for FM Land Mobile Applications in the PACKAGE STYLE .280 4L STUD 400 to 960 MHz. A 45FEATURES:C Common Emitter B E E PG = 9.0 dB at 2.0 W/470 MHz B Omnigold Metalization System C D JE IMAXIMUM RATINGS FGIC 0.8 A H#8-32 UNCKVCBO 36 V MINIMUM

9.1. Size:119K 1
2n5947.pdf