MUN5235DW Datasheet. Specs and Replacement
Type Designator: MUN5235DW 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.043
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.187 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT363
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MUN5235DW Substitution
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MUN5235DW datasheet
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MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co... See More ⇒
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Detailed specifications: MUN5216DW, MUN5230DW, MUN5231, MUN5231DW, MUN5232DW, MUN5233DW, MUN5234, MUN5234DW, 13003, MUN5236, MUN5236DW, MUN5237, MUN5237DW, MUN5311DW, MUN5312DW, MUN5313DW, MUN5314DW
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BJT Parameters and How They Relate
History: 2SD2414SM | MUN5236DW | ECG328 | ECG330W
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