2N5955 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5955
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO66
2N5955 Transistor Equivalent Substitute - Cross-Reference Search
2N5955 Datasheet (PDF)
2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n5954 2n5955 2n5956.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area Complement to type 2N6372 2N6373 2N6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 Collector
2n5954 2n5955 2n5956.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area Complement to type 2N6372/6373/6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifie
2n5951.pdf
September 20072N5951N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
2n5950.pdf
September 20072N5950N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
2n5952.pdf
2N5952N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current
2n5949 2n5950 2n5951 2n5952 2n5953.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5956.pdf
2N5956Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
