2N5960 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N5960 Specs and Replacement

Type Designator: 2N5960

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 675 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO61

2N5960 Substitution

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2N5960 datasheet

9.1. Size:295K fairchild semi

2n5961.pdf pdf_icon

Discrete POWER & Signal Technologies 2N5961 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Val60ue Units VCEO Collector-Emitter Volta... See More ⇒

9.2. Size:469K fairchild semi

2n5962 mmbt5962.pdf pdf_icon

Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U... See More ⇒

9.3. Size:62K central

2n5961 2n5962 2n5963.pdf pdf_icon