2N5962 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N5962
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 600
   Noise Figure, dB: -
   Package: TO92

2N5962 Transistor Equivalent Substitute - Cross-Reference Search

BUY TRANSISTORS