2N5962 Datasheet and Replacement
Type Designator: 2N5962
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 600
Noise Figure, dB: -
Package: TO92
2N5962 Substitution
2N5962 Datasheet (PDF)
2n5962 mmbt5962.pdf

Discrete POWER & SignalTechnologies2N5962 MMBT5962CEC TO-92BBE SOT-23Mark: 117NPN General Purpose AmplifierThis device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value U
2n5961 2n5962 2n5963.pdf

Tel: (631) 435-1110 Fax: (631) 435-1824www. cent ral semi . com
2n5961.pdf

Discrete POWER & SignalTechnologies2N5961C TO-92BENPN General Purpose AmplifierThis device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA. Sourcedfrom Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Val60ue UnitsVCEO Collector-Emitter Volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KTC4217 | HT772 | 2SA1708T-AN | 2N2746 | LBC557B | HSBD433 | 2N634A
Keywords - 2N5962 transistor datasheet
2N5962 cross reference
2N5962 equivalent finder
2N5962 lookup
2N5962 substitution
2N5962 replacement
History: KTC4217 | HT772 | 2SA1708T-AN | 2N2746 | LBC557B | HSBD433 | 2N634A



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