All Transistors. KTA501E Datasheet

 

KTA501E Datasheet and Replacement


   Type Designator: KTA501E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TESV
 

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KTA501E Datasheet (PDF)

 ..1. Size:43K  kec
 kta501e.pdf pdf_icon

KTA501E

SEMICONDUCTOR KTA501ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESA super-minimold package houses 2 transistor.Excellent temperature response between these 2 transistor.1 5 DIM MILLIMETERS_A 1.6 0.05+High pairing property in hFE._+A1 1.0 0.052_+B 1.6 0.05The follwing characteristics are commo

 8.1. Size:40K  kec
 kta501u.pdf pdf_icon

KTA501E

SEMICONDUCTOR KTA501UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURES B1A super-minimold package houses 2 transistor.1 5DIM MILLIMETERS_Excellent temperature response between these 2 transistor. A 2.00 + 0.202 _A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D_B1 1.25 + 0.1The follwin

 8.2. Size:1013K  kexin
 kta501u.pdf pdf_icon

KTA501E

SMD Type TransistorsPNP TransistorsKTA501USOT-353 Unit: mm+0.11.3 -0.10.65 Features Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2.+0.10.1+0.050.3 -0.1 -0.025 42.1+0.1-0.11. Q1 BASE2. Q , Q EMITTER1 23. Q BASE 2Q1 Q24. Q COLLECTOR25. Q COL

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMUN2215LT1G

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