KTA501U Datasheet. Specs and Replacement
Type Designator: KTA501U 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: USV
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KTA501U datasheet
SEMICONDUCTOR KTA501U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES B1 A super-minimold package houses 2 transistor. 1 5 DIM MILLIMETERS _ Excellent temperature response between these 2 transistor. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 High pairing property in hFE. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 The follwin... See More ⇒
SMD Type Transistors PNP Transistors KTA501U SOT-353 Unit mm +0.1 1.3 -0.1 0.65 Features Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. +0.1 0.1+0.05 0.3 -0.1 -0.02 5 4 2.1+0.1 -0.1 1. Q1 BASE 2. Q , Q EMITTER 1 2 3. Q BASE 2 Q1 Q2 4. Q COLLECTOR 2 5. Q COL... See More ⇒
SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + High pairing property in hFE. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 The follwing characteristics are commo... See More ⇒
Detailed specifications: KTA1940, KTA1962, KTA1962A, KTA2012E, KTA2012V, KTA2014E, KTA2014V, KTA501E, 2N2222A, KTA511T, KTA539, KTA701E, KTA701U, KTA702E, KTA708, KTA711E, KTA711T
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