All Transistors. KTA539 Datasheet

 

KTA539 Datasheet, Equivalent, Cross Reference Search

Type Designator: KTA539

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

KTA539 Transistor Equivalent Substitute - Cross-Reference Search

 

KTA539 Datasheet (PDF)

1.1. kta539.pdf Size:73K _kec

KTA539
KTA539

SEMICONDUCTOR KTA539 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY AMPLIFIER B C FEATURES Collector-Base Voltage : VCBO=-60V. Complementary to KTC815. DIM MILLIMETERS N A 4.70 MAX B 4.80 MAX E K G C 3.70 MAX D 0.45 D E 1.00 F 1.27 G 0.85 H 0.45 MAXIMUM RATING (Ta=25 ) _ J 14.00 + 0.50 H K 0.55 MAX CHARACTERISTIC SYMBOL RATING UNIT F F L 2.30 M 0.45 MAX VCB

Datasheet: KTA1962A , KTA2012E , KTA2012V , KTA2014E , KTA2014V , KTA501E , KTA501U , KTA511T , BD135 , KTA701E , KTA701U , KTA702E , KTA708 , KTA711E , KTA711T , KTA711U , KTA712E .

 


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