KTA539 Datasheet. Specs and Replacement

Type Designator: KTA539  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

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KTA539 datasheet

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KTA539

SEMICONDUCTOR KTA539 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY AMPLIFIER B C FEATURES Collector-Base Voltage VCBO=-60V. Complementary to KTC815. DIM MILLIMETERS N A 4.70 MAX B 4.80 MAX E K G C 3.70 MAX D 0.45 D E 1.00 F 1.27 G 0.85 H 0.45 MAXIMUM RATING (Ta=25 ) _ J 14.00 + 0.50 H K 0.55 MAX CHARACTERISTIC SYMBOL RATING UNIT F F L 2.30 M 0.45 MAX ... See More ⇒

Detailed specifications: KTA1962A, KTA2012E, KTA2012V, KTA2014E, KTA2014V, KTA501E, KTA501U, KTA511T, 2SC1815, KTA701E, KTA701U, KTA702E, KTA708, KTA711E, KTA711T, KTA711U, KTA712E

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