KTB1151 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB1151
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO126
KTB1151 Transistor Equivalent Substitute - Cross-Reference Search
KTB1151 Datasheet (PDF)
ktb1151.pdf
SEMICONDUCTOR KTB1151TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW COLLECTOR SATURATION VOLTAGEALARGE CURRENT BDCEFEATURESFHigh Power Dissipation : PC=1.5W(Ta=25 )Complementary to KTD1691.GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LMAXIMUM RATING (Ta=25 )C 0.7_+D 3.2 0.1CHARACTERISTIC SYMBOL RATING UNITE 3.5_+F 11.0 0.3VCBO -60 VCollecto
ktb1124.pdf
SEMICONDUCTOR KTB1124TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTFEATURESAdoption of MBIT processes.Low collector-to-emitter saturation voltage.Fast switching speed.Large current capacity and wide ASO.Complementary to KTD1624.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBO -60 VCollector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
