KTB1260 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB1260
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT-89
KTB1260 Transistor Equivalent Substitute - Cross-Reference Search
KTB1260 Datasheet (PDF)
ktb1260.pdf
SEMICONDUCTOR KTB1260TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTD1898. DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25 )F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG 0.40
ktb1241.pdf
SEMICONDUCTOR KTB1241TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. B DFEATURE High Breakdown Voltage and High Current: VCEO=-80V, IC=-1A.DIM MILLIMETERSP Low VCE(sat)DEPTH:0.2A 7.20 MAX Complementary to KTD1863. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFF_MAXIMUM RATING (Ta=25 ) J 14.00 +
ktb1234t.pdf
SEMICONDUCTOR KTB1234TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORDRIVER APPLICATIONS.FEATURES EBAF amplifier, solenoid drivers, LED drivers. KDIM MILLIMETERSDarlington connection._A 2.9 + 0.2B 1.6+0.2/-0.1High DC current gain._C 0.70 + 0.0523Very small-sized package permitting sets to be made_D 0.4 + 0.1E 2.8+0.2/-0.3smaller and slimer._F 1.9 + 0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
