KTB2510 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB2510
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 230 pF
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO3P(N)
KTB2510 Transistor Equivalent Substitute - Cross-Reference Search
KTB2510 Datasheet (PDF)
ktb2510.pdf
SEMICONDUCTOR KTB2510TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH POWER AMPLIFIERA Q BDARLINGTON APPLICATION.KFEATURESComplementary to KTD1510DIM MILLIMETERSRecommended for 60W Audio Amplifier Output Stage. A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25)G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL
ktb2530.pdf
SEMICONDUCTOR KTB2530TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH POWER AMPLIFIERDARLINGTON APPLICATION.AQ BNO KFEATURESDIM MILLIMETERSComplementary to KTD1530 _A +15.60 0.20_B4.80 + 0.20Recommended for 80W Audio Amplifier Output Stage. _C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20_G 3.50 + 0.20D _
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
