KTB2510 Datasheet. Specs and Replacement

Type Designator: KTB2510  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 230 pF

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: TO3PN

 KTB2510 Substitution

- BJT ⓘ Cross-Reference Search

 

KTB2510 datasheet

 ..1. Size:341K  kec

 ktb2510.pdf pdf_icon

KTB2510

SEMICONDUCTOR KTB2510 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER A Q B DARLINGTON APPLICATION. K FEATURES Complementary to KTD1510 DIM MILLIMETERS Recommended for 60W Audio Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL ... See More ⇒

 9.1. Size:646K  kec

 ktb2530.pdf pdf_icon

KTB2510

SEMICONDUCTOR KTB2530 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON APPLICATION. A Q B N O K FEATURES DIM MILLIMETERS Complementary to KTD1530 _ A + 15.60 0.20 _ B 4.80 + 0.20 Recommended for 80W Audio Amplifier Output Stage. _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 _ G 3.50 + 0.20 D _ ... See More ⇒

Detailed specifications: KTA733B, KTB1124, KTB1151, KTB1234T, KTB1241, KTB1260, KTB1772, KTB2234, C3198, KTB2530, KTB598, KTB631K, KTB688B, KTB764, KTB772, KTB817B, KTB985

Keywords - KTB2510 pdf specs

 KTB2510 cross reference

 KTB2510 equivalent finder

 KTB2510 pdf lookup

 KTB2510 substitution

 KTB2510 replacement