KTB985 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB985
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 39 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92L
KTB985 Transistor Equivalent Substitute - Cross-Reference Search
KTB985 Datasheet (PDF)
ktb985.pdf
SEMICONDUCTOR KTB985TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTB DFEATURES Adoption of MBIT processes.DIM MILLIMETERSP Low collector-to-emitter saturation voltage.DEPTH:0.2A 7.20 MAX Fast switching speed. B 5.20 MAXCC 0.60 MAXS Large current capacity and wide ASO.D 2.50 MAXQE 1.15 MAXK
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SC3519 | KTA1266 | KT939A