KTC3620V Datasheet and Replacement

SEMICONDUCTOR KTC3620VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF/WIDE BAND AMPLIFIER APPLICATON.EFEATURESBLow Noise Figure.High Gain.DIM MILLIMETERS2_A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_G 0.8 0.05+H 0.40P P_J 0.12 + 0.05_K 0.2 + 0.05P 5MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNI

SEMICONDUCTOR KTC3620STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF/WIDE BAND AMPLIFIER APPLICATON.EFEATURES L B LDIM MILLIMETERSLow Noise Figure._+A 2.93 0.20B 1.30+0.20/-0.15High Gain.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10L 0.55P PM 0.20 MINN 1.00+0.20/-0.10P 7MAXIMUM RATING (Ta=25

SEMICONDUCTOR KTC3620UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF/WIDE BAND AMPLIFIER APPLICATON.EFEATURESM B MDIM MILLIMETERSLow Noise Figure._A 2.00 0.20+DHigh Gain. 2 _+B 1.25 0.15_C 0.90 0.10+1 3D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30K 0.00-0.10L 0.70H_M 0.42+0.10N 0.10 MINN NKMAXIMUM RATING

SEMICONDUCTOR KTC3605UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESBLow Noise Figure, High Gain. B1NF=1.1dB, |S21e|2=13dB (f=1GHz).DIM MILLIMETERS1 6_A 2.00 0.20+Two internal isolated Transistors in one package._2 5 A1 1.3 + 0.1_B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.10/-0.05MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC3600UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.1dB, |S21e|2=13dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70

SEMICONDUCTOR KTC3605TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURES K B KDIM MILLIMETERSLow Noise Figure, High Gain._A 2.9 + 0.216B 1.6+0.2/-0.1NF=1.1dB, |S21e|2=13dB (f=1GHz)._C 0.70 + 0.052 5Two internal isolated Transistors in one package. _+D 0.4 0.1E 2.8+0.2/-0.3_F 1.9 + 0.23 4G 0.95_H 0.16 +

SEMICONDUCTOR KTC3660UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.TENTATIVEFEATURESLow Noise Figure, High Gain.NF=1.4dB (f=2GHz), |S21e|2=13.5dB (f=2GHz).EM B MDIM MILLIMETERS1 4 D_A 2.00 + 0.20MAXIMUM RATING (Ta=25)_B 1.25 + 0.15_C 0.90 + 0.10CHARACTERISTIC SYMBOL RATING UNIT2 3D 0.3+0.10/-0.05_E

SEMICONDUCTOR KTC3631D/LTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING.FEATURES AI C JLow Collector Saturation VoltageDIM MILLIMETERS_A 6.60 + 0.2: VCE(sat)=0.5V(Max.) at (IC=0.5A)._B 6.10 + 0.2_C 5.0 + 0.2High Switching Speed Typically. _D 1.10 + 0.2_E 2.70 + 0.2: tf 0.4 S at IC=1A. _F 2.30 + 0.1H 1.00 MAXComplementary to K

SEMICONDUCTOR KTC3600STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.L B LNF=1.1dB, |S21e|2=13dB (f=1GHz). DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25 )H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATIN

SEMICONDUCTOR KTC3640VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF/WIDE BAND AMPLIFIER APPLICATON.EFEATURESBLow Noise Figure, High Gain.NF=1.4dB, S21e 2=9.0dB(2GHz)DIM MILLIMETERS2_A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_G 0.8 0.05+H 0.40P PMAXIMUM RATING (Ta=25 )_J 0.12 + 0.05_K 0.2 + 0.05CHARACTE