KTC3911S Datasheet, Equivalent, Cross Reference Search

   Type Designator: KTC3911S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23

KTC3911S Transistor Equivalent Substitute - Cross-Reference Search

KTC3911S Datasheet (PDF)

..1. Size:445K kec
ktc3911s.pdf

SEMICONDUCTOR KTC3911STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION.FEATURESEL B LHigh Voltage : VCEO=120V.DIM MILLIMETERSExcellent hFE Linearity_+2.93 0.20AB 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).C 1.30 MAX2High hFE: hFE=200 700. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Noise : NF=1dB(Typ.), 10dB(Max.).1G 1.90

9.1. Size:354K kec
ktc3964.pdf

SEMICONDUCTOR KTC3964TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. ASwitching Applications BDCSolenoid Drive ApplicationsETemperature Compensated for Audio Amplifier Output StageFFEATURESGHigh DC current gain : hFE = 500(min) (IC=400mA)HLow Collector emitter saturation voltage : VCE(sat)=0.5V(max)DIM MILLIMETERSJA 8.3 MAX(IC=300mA)

9.2. Size:929K russia
ktc394a-b.pdf