KTC5706D Datasheet, Equivalent, Cross Reference Search
Type Designator: KTC5706D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: DPAK
KTC5706D Transistor Equivalent Substitute - Cross-Reference Search
KTC5706D Datasheet (PDF)
ktc5706d-l.pdf
SEMICONDUCTOR KTC5706D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.AI FEATURESC JAdoption of FBET, MBIT Processes.DIM MILLIMETERS_High Current Capacitance. A 6.60 + 0.2_B 6.10 + 0.2Low Collector-to-Emitter Saturation Voltage._C 5.0 + 0.2_D 1.10 + 0.2High-Speed Switc
ktc5706.pdf
SEMICONDUCTOR KTC5706TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,ABMOTOR DRIVERS, STROBES APPLICATION.DCEFEATURESFAdoption of FBET, MBIT Processes.High Current Capacitance.GLow Collector-to-Emitter Saturation Voltage.HHigh-Speed Switching.DIM MILLIMETERSJA 8.3 MAXUltra small Package Facilitates Miniaturizatio
ktc5707d l.pdf
SEMICONDUCTOR KTC5707D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.AI FEATURESC JAdoption of FBET, MBIT Processes.DIM MILLIMETERS_High Current Capacitance. A 6.60 + 0.2_B 6.10 + 0.2Low Collector-to-Emitter Saturation Voltage._C 5.0 + 0.2_D 1.10 + 0.2High-Speed Switching._
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
